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Electron Beam Lithography: UPSC Notes for Science and Technology | Testbook

Electron-beam lithography is a process that involves the use of a focused beam of electrons to create custom shapes on a surface. This surface is typically coated with a film known as a resist, which is resistant to electrons.

Electron-lithography – UPSC Notes:-

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An Introduction to Electron-beam Lithography

Electron-beam lithography, also known as e-beam lithography, leverages the power of the electron beam to selectively remove areas of the resist by immersing it in a solvent. This process changes the solubility of the resist, similar to photolithography. The primary purpose of electron-beam lithography is to create microstructures in the resist. These structures can later be transferred to the substrate material, usually through an etching process. The advantage of this maskless lithography is its ability to create custom shapes (direct-write) with a resolution less than 10 nm. Although it has a high resolution, electron-beam lithography is characterized by its low throughput. It is commonly used in the fabrication of photomasks, production of semiconductor devices in small volumes, and research and development.

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How does Electron-beam Lithography Operate?

This new technology has the potential to significantly reduce the cost of current e-beam and optical lithography. This invention introduces a new method of etching thin lines on a substrate using electrodes, a process known as electron lithography.

The main challenge will be to encapsulate the entire assembly in a user-friendly device that can be operated with the simple press of a button.

  1. The lithography process is quite simple. It begins with a transparent glass plate, which is coated with a layer of a suitable polymer.
  2. A layer of chromium is added on top of this, and a trench of the desired pattern is dug into the chromium layer, exposing parts of the polymer layer.
  3. The exposed polymer is then dissolved using acetone and removed.
  4. This results in a gap in the polymer-chromium sandwich.

This entire assembly acts like a negative of a developed photographic film.

  • When the chosen metal is "sputtered" onto this sandwich, it fills the gap and falls directly onto the glass plate.
  • In this way, the desired pattern is created using a metal of choice. This pattern will have a width equal to the width of the trench and the thickness of the polymer layer.

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How does the Latest Electron Lithography Differ from Existing Processes?

  • The primary difference lies in how the trench is dug.
  • The electrodes used are widely separated from each other.
  • When the thin cathode, similar to a nib, moves over the chromium layer, it causes the metal to heat up, dissolve, and flow out. This creates a trench with a width almost identical to that of the electrode tip.
  • This setup could be achieved at a cost of approximately Rs.20,00,000.

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What are the Benefits of Electron-beam Lithography?

  • This technique could potentially reduce the cost of current equipment from about five crore rupees per piece to merely Rs.15-20 lakhs.
  • This could be beneficial not only for the industry but also for academia, as more colleges could afford to conduct research in nanotechnology.
  • Since it does not require high currents or a vacuum atmosphere, it is a relatively more environmentally-friendly method than existing ones.

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What are the Drawbacks of Electron Lithography?

Despite the high resolution of electron-beam lithography, users often overlook the generation of defects during the process. Defects can be categorized into two types: data-related defects and physical defects.

Data-related defects can be further divided into two subcategories. Blanking or deflection errors occur when the electron beam is not properly deflected, while shaping errors occur in variable-shaped beam systems when the wrong shape is projected onto the sample. These errors can originate either from the electron optical control hardware or the input data that was taped out. As might be expected, larger data files are more susceptible to data-related defects.

Physical defects are more diverse and can include sample charging (either negative or positive), backscattering calculation errors, outgassing, and contamination. Since the write time for electron-beam lithography can easily exceed a day, "randomly occurring" defects are more likely to occur. Larger data files can present more opportunities for defects.

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